052-6407 rev b 3-2013 APT50GR120JD30 symbol parameter ratings unit v ces collector emitter voltage 1200 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 84 a i c2 continuous collector current @ t c = 90c 50 i cm pulsed collector current 1 200 scwt short circuit withstand time: v ce = 600v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 417 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 1.1ma) 1200 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) 2.5 3.2 collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) 3.3 collector-emitter on voltage (v ge = 15v, i c = 100a, t j = 25c) 3.5 i ces collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 20 1100 a collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 200 i ges gate-emitter leakage current (v ge = 20v) 250 na ultra fast npt - igbt ? the ultra fast npt - igbt ? family of products is the newest generation of planar igbts optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. features ? low saturation voltage ? low tail current ? rohs compliant ? short circuit withstand rated ? high frequency switching ? ultra low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). APT50GR120JD30 1200v, 50a, v ce(on) = 2.5v typical s ot -227 file # e145592 "ul recognized" g e e c combi (igbt and diode) isotop ? downloaded from: http:///
APT50GR120JD30 052-6407 rev b 3-2013 thermal and mechanical characteristics dynamic characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speciications and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 5550 pf c oes output capacitance 500 c res reverse transfer capacitance 145 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 600v i c = 50a 7.5 v q g 3 total gate charge 330 445 nc q ge gate-emitter charge 52 72 q gc gate- collector charge 156 200 t d(on) turn-on delay time inductive switching (25c) v cc = 600v v ge = 15v i c = 50a r g = 4.3 4 t j = +25c 28 ns t r current rise time 38 t d(off) turn-off delay time 237 t f current fall time 45 e on2 5 turn-on switching energy 2135 3200 j e off 6 turn-off switching energy 1478 2210 t d(on) turn-on delay time inductive switching (125c) v cc = 600v v ge = 15v i c = 50a r g = 4.3 4 t j = +125c 28 ns t r current rise time 38 t d(off) turn-off delay time 270 t f current fall time 54 e on2 5 turn-on switching energy 3157 4765 j e off 6 turn-off switching energy 1884 2820 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 10 -5 10 -4 10 -3 0.1 1 10 -2 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) .30 c/w junction to case thermal resistance (diode) 1.1 v isolation rms voltage (50-60hz sinusoidal waveform from terminals to mounting base for 1 min.) 2500 w t package weight 1.03 oz 29.2 g torque maximum mounting torque 10 lbin 1.1 nm downloaded from: http:///
052-6407 rev b 3-2013 APT50GR120JD30 typical performance curves 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 8 10 12 14 16 0 50 100 150 200 250 0 2 4 6 8 10 12 0 50 100 150 200 250 300 0 5 10 15 20 25 30 0 50 100 150 200 250 0 2 4 6 8 10 250s pulse test<0.5 % duty cycle t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 25a i c = 50a i c = 100a i c = 50a i c = 100a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3, saturation voltage characteristics i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9, dc collector current vs case temperature i c , dc collector current (a) 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 t j , junction temperature figure 8, breakdown voltage vs junction temperature 6.5v 7v i c = 25a 8.0v 8.5v 7.5v 9v i c (a) figure 2, max frequency vs current (t case = 75c) t j = 150c 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 frequency (khz) bv ces , breakdown voltage downloaded from: http:///
APT50GR120JD30 052-6407 rev b 3-2013 typical performance curves 0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200 250 300 350 i c = 50a t j = 25c v ce = 960v v ce = 600v v ce = 240v gate charge (nc) figure 11, gate charge v ge , gate-to-emitter voltage (v) 1 10 100 0 20 40 60 80 100 10 100 1000 0 20 40 60 80 100 1000 1500 2000 2500 3000 3500 4000 0 25 50 75 100 125 0 2000 4000 6000 8000 10000 0 10 20 30 40 50 100 1000 10000 100000 0 20 40 60 80 100 v ce = 600v, v ge =15v, r g = 4.3? t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13, turn-off time vs collector current switching time (ns) r g , gate resistance () figure 15, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14, energy loss vs collector current switching energy loss (j) t j , junction temperature (c) figure 16, switching energy vs junction temperature switching energy losses (j) t r t d(off) t f v ce = 600v, v ge =15v, r g = 4.3? t j = 25c t j = 125c v ce = 600v, v ge =15v, r g = 4.3? t j = 25c t j = 125c e on2 e off e on2 e off switching energy loss (j) e off e on2 v ce = 600v, v ge =15v, r g = 4.3? i c = 50a 1.0e?11 1.0e?10 1.0e?9 1.0e?8 1.0e?7 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 400 1 10 100 1000 4000 v ce , collector-to-emitter voltage figure 17, minimum switching safe operating area i c , collector current (a) v ce = 600v, v ge =15v, r g = 4.3? i c = 50a t j = 125c 100s 10ms .1ms 100ms downloaded from: http:///
052-6407 rev b 3-2013 APT50GR120JD30 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speciied. ultrafast soft recovery rectifier diode symbol characteristic / test conditions APT50GR120JD30 unit i f(av) maximum average forward current (t c = 92c, duty cycle = 0.5) 30 amps i f(rms) rms forward current (square wave, 50% duty) 39 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 210 symbol characteristic / test conditions min type max unit v f forward voltage i f = 30a 2.6 volts i f = 60a 3.25 i f = 30a, t j = 125c 1.8 symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c - 25 - ns t rr reverse recovery time i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 25 c - 300 - q rr reverse recovery charge - 360 - nc i rrm maximum reverse recovery current - 4 - amps t rr reverse recovery time i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 125 c - 380 - ns q rr reverse recovery charge - 1700 - nc i rrm maximum reverse recovery current - 8 - amps t rr reverse recovery time i f = 60a, di f /dt = -1000a/ s v r = 800v, t c = 125 c - 160 - ns q rr reverse recovery charge - 2550 - nc i rrm maximum reverse recovery current - 28 - amps z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 18. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.201.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : d = 0.9 downloaded from: http:///
APT50GR120JD30 052-6407 rev b 3-2013 dynamic characteristics t j = 25c unless otherwise speciied q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 125 c v r = 800v 15a 30a 60a t rr q rr q rr t rr i rrm 450400 350 300 250 200 150 100 50 0 3025 20 15 10 50 duty cycle = 0.5 t j = 175 c 4540 35 30 25 20 15 10 50 1.21.0 0.8 0.6 0.4 0.2 0.0 200150 100 50 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 23. dynamic parameters vs. junction temperature figure 24. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 25. junction capacitance vs. reverse voltage v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 19. forward current vs. forward voltage figure 20. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 21. reverse recovery charge vs. current rate of change figure 22. reverse recovery cu rrent vs. current rate of change 0 1 2 3 4 5 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 800v 60a 15a 30a 100 9080 70 60 50 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 t j = 125 c v r = 800v 60a 30a 15a 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 downloaded from: http:///
052-6407 rev b 3-2013 APT50GR120JD30 sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * emitter/anode collector/cathode gate r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * emitter/anode dimensions in millimeters and (inches) *emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. 4 3 1 2 5 zer o pearson 2878 current transformer di f /d t adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 27. diode reverse recovery waveform deinition figure 26. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve deined by i rrm and t rr. 5 1 2 3 4 0.25 i rrm downloaded from: http:///
APT50GR120JD30 052-6407 rev b 3-2013 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information co ntained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by mi crosemi in writing signed by an oficer of microsemi. microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any u ser or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by micro semi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. mi- crosemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp downloaded from: http:///
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